MACOM MADP-011104 Shunt Positive Intrinsic Negative (PIN) Diodes are high-power shunt diodes that provide a good switch or attenuator performance from 50MHz to 5GHz. The MADP-011104 diodes feature 350W Continuous Wave (CW) incident power handling, 0.15dB insertion loss, and 29dB isolation at 3GHz frequency. These PIN diodes are available in a 3mm, 12-lead, and lead-free Quad Flat No-leads (QFN) plastic package. The MADP-011104 diodes are suited for switch and attenuator applications from HF through S-band. These applications require high peak and CW power, lower loss, and high linearity surface-mount assemblies. The MADP-011104 diodes are sensitive to ESD and require proper ESD control techniques.

FEATURES

· High-power shunt device

· 3mm, 12-lead, and lead-free QFN plastic package

· Suited for switch and attenuator applications from HF through S-band

· Halogen-free "Green" mold compound

· RoHS compliant

SPECIFICATIONS

· 50MHz to 5GHz switch or attenuator performance range

· 350W incident power handling @3GHz

· 0.15dB insertion loss @3GHz

· 29dB isolation @3GHz

· 8W CW power dissipation

· 2000ns lifetime

· 45°C/W thermal resistance

· 0.45pF total capacitance

· 2.21Ω resistance

· 0.91V forward voltage (VF) @100mA (typical)

· 6nA reverse leakage current (IR) @-800V (typical)

· 250mA DC forward current

· -40°C to 85°C operating temperature range